Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
60 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Typical Gate Charge @ Vgs
18 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5mm
Width
6.29mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
3.37mm
Product details
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
AED 7.80
Each (ex VAT)
AED 8.19
Each (inc. VAT)
Standard
1
AED 7.80
Each (ex VAT)
AED 8.19
Each (inc. VAT)
Standard
1
Buy in bulk
quantity | Unit price |
---|---|
1 - 9 | AED 7.80 |
10 - 49 | AED 6.80 |
50 - 99 | AED 6.50 |
100 - 249 | AED 6.25 |
250+ | AED 6.00 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
60 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Typical Gate Charge @ Vgs
18 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5mm
Width
6.29mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
3.37mm
Product details