Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
760 mA
Maximum Drain Source Voltage
30 V
Package Type
SC-89-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
244 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
236 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Transistor Material
Si
Width
1.2mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
4.43 nC @ 4.5 V
Length
1.7mm
Minimum Operating Temperature
-55 °C
Height
0.6mm
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
AED 26.25
AED 1.312 Each (Supplied as a Tape) (ex VAT)
AED 27.56
AED 1.378 Each (Supplied as a Tape) (inc. VAT)
Standard
20
AED 26.25
AED 1.312 Each (Supplied as a Tape) (ex VAT)
AED 27.56
AED 1.378 Each (Supplied as a Tape) (inc. VAT)
Stock information temporarily unavailable.
Standard
20
Stock information temporarily unavailable.
| Quantity | Unit price | Per Tape |
|---|---|---|
| 20 - 180 | AED 1.312 | AED 26.25 |
| 200 - 980 | AED 1.26 | AED 25.20 |
| 1000 - 1980 | AED 1.155 | AED 23.10 |
| 2000 - 4980 | AED 1.05 | AED 21.00 |
| 5000+ | AED 0.998 | AED 19.95 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
760 mA
Maximum Drain Source Voltage
30 V
Package Type
SC-89-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
244 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
236 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Transistor Material
Si
Width
1.2mm
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
4.43 nC @ 4.5 V
Length
1.7mm
Minimum Operating Temperature
-55 °C
Height
0.6mm
Product details


