N-Channel MOSFET, 1.1 A, 20 V, 6-Pin SOT-363 Vishay SI1902CDL-T1-GE3

RS Stock No.: 152-6354Brand: VishayManufacturers Part No.: SI1902CDL-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.1 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

306 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

0.42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

12 V

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

2 nC @ 10 V

Width

2.4mm

Number of Elements per Chip

1

Height

1mm

Minimum Operating Temperature

-55 °C

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AED 0.30

Each (In a Pack of 50) (ex VAT)

AED 0.315

Each (In a Pack of 50) (inc VAT)

N-Channel MOSFET, 1.1 A, 20 V, 6-Pin SOT-363 Vishay SI1902CDL-T1-GE3
Select packaging type

AED 0.30

Each (In a Pack of 50) (ex VAT)

AED 0.315

Each (In a Pack of 50) (inc VAT)

N-Channel MOSFET, 1.1 A, 20 V, 6-Pin SOT-363 Vishay SI1902CDL-T1-GE3
Stock information temporarily unavailable.
Select packaging type

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.1 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

306 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

0.42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

12 V

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

2 nC @ 10 V

Width

2.4mm

Number of Elements per Chip

1

Height

1mm

Minimum Operating Temperature

-55 °C