Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.15 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
730 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
3.3 nC @ 10 V
Width
1.4mm
Height
1.02mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
AED 36.75
AED 3.675 Each (In a Pack of 10) (ex VAT)
AED 38.59
AED 3.859 Each (In a Pack of 10) (inc. VAT)
Standard
10
AED 36.75
AED 3.675 Each (In a Pack of 10) (ex VAT)
AED 38.59
AED 3.859 Each (In a Pack of 10) (inc. VAT)
Standard
10
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | AED 3.675 | AED 36.75 |
| 100 - 240 | AED 2.782 | AED 27.82 |
| 250 - 490 | AED 2.572 | AED 25.72 |
| 500 - 990 | AED 2.205 | AED 22.05 |
| 1000+ | AED 1.942 | AED 19.42 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.15 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
730 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
3.3 nC @ 10 V
Width
1.4mm
Height
1.02mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


