Vishay N-Channel MOSFET, 1.15 A, 100 V, 3-Pin SOT-23 SI2328DS-T1-E3

RS Stock No.: 710-3266Brand: VishayManufacturers Part No.: SI2328DS-T1-E3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.15 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

730 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

3.3 nC @ 10 V

Width

1.4mm

Height

1.02mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

AED 36.75

AED 3.675 Each (In a Pack of 10) (ex VAT)

AED 38.59

AED 3.859 Each (In a Pack of 10) (inc. VAT)

Vishay N-Channel MOSFET, 1.15 A, 100 V, 3-Pin SOT-23 SI2328DS-T1-E3
Select packaging type

AED 36.75

AED 3.675 Each (In a Pack of 10) (ex VAT)

AED 38.59

AED 3.859 Each (In a Pack of 10) (inc. VAT)

Vishay N-Channel MOSFET, 1.15 A, 100 V, 3-Pin SOT-23 SI2328DS-T1-E3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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QuantityUnit pricePer Pack
10 - 90AED 3.675AED 36.75
100 - 240AED 2.782AED 27.82
250 - 490AED 2.572AED 25.72
500 - 990AED 2.205AED 22.05
1000+AED 1.942AED 19.42

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.15 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

730 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

3.3 nC @ 10 V

Width

1.4mm

Height

1.02mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more