Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
3.04mm
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Transistor Material
Si
Width
1.4mm
Height
1.02mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
AED 40.95
AED 2.048 Each (In a Pack of 20) (ex VAT)
AED 43.00
AED 2.15 Each (In a Pack of 20) (inc. VAT)
Standard
20
AED 40.95
AED 2.048 Each (In a Pack of 20) (ex VAT)
AED 43.00
AED 2.15 Each (In a Pack of 20) (inc. VAT)
Standard
20
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 20 - 180 | AED 2.048 | AED 40.95 |
| 200 - 480 | AED 1.575 | AED 31.50 |
| 500 - 980 | AED 1.47 | AED 29.40 |
| 1000 - 1980 | AED 1.312 | AED 26.25 |
| 2000+ | AED 1.208 | AED 24.15 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
3.04mm
Typical Gate Charge @ Vgs
8.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Transistor Material
Si
Width
1.4mm
Height
1.02mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


