P-Channel MOSFET, 6.2 A, 12 V, 6-Pin TSOP Vishay SI3447CDV-T1-GE3

RS Stock No.: 812-3154Brand: VishayManufacturers Part No.: SI3447CDV-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6.2 A

Maximum Drain Source Voltage

12 V

Package Type

TSOP

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

68 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Length

3.1mm

Typical Gate Charge @ Vgs

20 nC @ 8 V

Width

1.7mm

Number of Elements per Chip

1

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1mm

Country of Origin

China

Product details

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

AED 43.05

AED 2.152 Each (Supplied as a Tape) (ex VAT)

AED 45.20

AED 2.26 Each (Supplied as a Tape) (inc. VAT)

P-Channel MOSFET, 6.2 A, 12 V, 6-Pin TSOP Vishay SI3447CDV-T1-GE3
Select packaging type

AED 43.05

AED 2.152 Each (Supplied as a Tape) (ex VAT)

AED 45.20

AED 2.26 Each (Supplied as a Tape) (inc. VAT)

P-Channel MOSFET, 6.2 A, 12 V, 6-Pin TSOP Vishay SI3447CDV-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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QuantityUnit pricePer Tape
20 - 20AED 2.152AED 43.05
40 - 180AED 1.838AED 36.75
200 - 380AED 1.575AED 31.50
400 - 780AED 1.418AED 28.35
800+AED 1.26AED 25.20

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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6.2 A

Maximum Drain Source Voltage

12 V

Package Type

TSOP

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

68 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Length

3.1mm

Typical Gate Charge @ Vgs

20 nC @ 8 V

Width

1.7mm

Number of Elements per Chip

1

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1mm

Country of Origin

China

Product details

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in