P-Channel MOSFET, 8 A, 12 V, 6-Pin TSOP-6 Vishay SI3473CDV-T1-GE3

RS Stock No.: 152-6366Brand: VishayManufacturers Part No.: SI3473CDV-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

12 V

Package Type

TSOP-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

36 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

-1V

Minimum Gate Threshold Voltage

-0.4V

Maximum Power Dissipation

4.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

3.1mm

Typical Gate Charge @ Vgs

43 nC @ 10 V

Width

1.7mm

Minimum Operating Temperature

-55 °C

Height

1mm

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AED 2.75

Each (In a Pack of 25) (ex VAT)

AED 2.888

Each (In a Pack of 25) (inc VAT)

P-Channel MOSFET, 8 A, 12 V, 6-Pin TSOP-6 Vishay SI3473CDV-T1-GE3
Select packaging type

AED 2.75

Each (In a Pack of 25) (ex VAT)

AED 2.888

Each (In a Pack of 25) (inc VAT)

P-Channel MOSFET, 8 A, 12 V, 6-Pin TSOP-6 Vishay SI3473CDV-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
25 - 225AED 2.75AED 68.75
250 - 600AED 2.65AED 66.25
625 - 1225AED 2.55AED 63.75
1250 - 2475AED 2.35AED 58.75
2500+AED 2.20AED 55.00

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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

12 V

Package Type

TSOP-6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

36 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

-1V

Minimum Gate Threshold Voltage

-0.4V

Maximum Power Dissipation

4.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

3.1mm

Typical Gate Charge @ Vgs

43 nC @ 10 V

Width

1.7mm

Minimum Operating Temperature

-55 °C

Height

1mm