Dual N-Channel MOSFET, 19.8 A, 20 V, 8-Pin SO-8 Vishay SI4204DY-T1-GE3

RS Stock No.: 180-7285Brand: VishayManufacturers Part No.: SI4204DY-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

19.8 A

Maximum Drain Source Voltage

20 V

Series

TrenchFET

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.006 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Number of Elements per Chip

2

Country of Origin

China

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AED 4.55

Each (On a Reel of 2500) (ex VAT)

AED 4.778

Each (On a Reel of 2500) (inc VAT)

Dual N-Channel MOSFET, 19.8 A, 20 V, 8-Pin SO-8 Vishay SI4204DY-T1-GE3

AED 4.55

Each (On a Reel of 2500) (ex VAT)

AED 4.778

Each (On a Reel of 2500) (inc VAT)

Dual N-Channel MOSFET, 19.8 A, 20 V, 8-Pin SO-8 Vishay SI4204DY-T1-GE3
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

19.8 A

Maximum Drain Source Voltage

20 V

Series

TrenchFET

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.006 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Number of Elements per Chip

2

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more