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P-Channel MOSFET, 18.3 A, 30 V, 8-Pin SO-8 Vishay Si4425FDY-T1-GE3

RS Stock No.: 200-6797Brand: VishayManufacturers Part No.: Si4425FDY-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

18.3 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET® Gen IV

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.016 Ω, 0.0095 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

1

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AED 1.25

Each (In a Pack of 50) (ex VAT)

AED 1.312

Each (In a Pack of 50) (inc. VAT)

P-Channel MOSFET, 18.3 A, 30 V, 8-Pin SO-8 Vishay Si4425FDY-T1-GE3

AED 1.25

Each (In a Pack of 50) (ex VAT)

AED 1.312

Each (In a Pack of 50) (inc. VAT)

P-Channel MOSFET, 18.3 A, 30 V, 8-Pin SO-8 Vishay Si4425FDY-T1-GE3
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

18.3 A

Maximum Drain Source Voltage

30 V

Series

TrenchFET® Gen IV

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.016 Ω, 0.0095 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more