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Vishay P-Channel MOSFET, 9.6 A, 30 V, 8-Pin PowerPAK 1212-8 SI7121DN-T1-GE3

RS Stock No.: 818-1380Brand: VishayManufacturers Part No.: SI7121DN-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

9.6 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

26 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

27.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

3.15mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.15mm

Typical Gate Charge @ Vgs

33 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.07mm

Minimum Operating Temperature

-50 °C

Country of Origin

China

Product details

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

AED 46.72

AED 4.672 Each (In a Pack of 10) (ex VAT)

AED 49.06

AED 4.906 Each (In a Pack of 10) (inc. VAT)

Vishay P-Channel MOSFET, 9.6 A, 30 V, 8-Pin PowerPAK 1212-8 SI7121DN-T1-GE3
Select packaging type

AED 46.72

AED 4.672 Each (In a Pack of 10) (ex VAT)

AED 49.06

AED 4.906 Each (In a Pack of 10) (inc. VAT)

Vishay P-Channel MOSFET, 9.6 A, 30 V, 8-Pin PowerPAK 1212-8 SI7121DN-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
10 - 90AED 4.672AED 46.72
100 - 240AED 3.728AED 37.28
250 - 490AED 2.888AED 28.88
500 - 990AED 2.572AED 25.72
1000+AED 2.205AED 22.05

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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

9.6 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

26 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

27.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

3.15mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.15mm

Typical Gate Charge @ Vgs

33 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.07mm

Minimum Operating Temperature

-50 °C

Country of Origin

China

Product details

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more