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Vishay Dual N-Channel MOSFET, 20 A, 40 V, 8-Pin PowerPAK SO-8 SI7288DP-T1-GE3

RS Stock No.: 818-1390Brand: VishayManufacturers Part No.: SI7288DP-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

40 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

22 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

15.6 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

5mm

Transistor Material

Si

Length

5.99mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Height

1.07mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

Dual N-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

AED 54.08

AED 5.408 Each (In a Pack of 10) (ex VAT)

AED 56.78

AED 5.678 Each (In a Pack of 10) (inc. VAT)

Vishay Dual N-Channel MOSFET, 20 A, 40 V, 8-Pin PowerPAK SO-8 SI7288DP-T1-GE3
Select packaging type

AED 54.08

AED 5.408 Each (In a Pack of 10) (ex VAT)

AED 56.78

AED 5.678 Each (In a Pack of 10) (inc. VAT)

Vishay Dual N-Channel MOSFET, 20 A, 40 V, 8-Pin PowerPAK SO-8 SI7288DP-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
10 - 90AED 5.408AED 54.08
100 - 240AED 5.145AED 51.45
250 - 490AED 4.305AED 43.05
500 - 990AED 4.042AED 40.42
1000+AED 3.78AED 37.80

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

40 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

22 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

15.6 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

5mm

Transistor Material

Si

Length

5.99mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Height

1.07mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

Dual N-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more