N-Channel MOSFET, 100 A, 40 V, 8-Pin PowerPAK SO-8DC Vishay SIDR638DP-T1-RE3

RS Stock No.: 200-6839Brand: VishayManufacturers Part No.: SIDR638DP-T1-RE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET® Gen IV

Package Type

PowerPAK SO-8DC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.00088 Ω, 0.00116 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Number of Elements per Chip

1

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AED 9.65

Each (On a Reel of 3000) (ex VAT)

AED 10.132

Each (On a Reel of 3000) (inc VAT)

N-Channel MOSFET, 100 A, 40 V, 8-Pin PowerPAK SO-8DC Vishay SIDR638DP-T1-RE3

AED 9.65

Each (On a Reel of 3000) (ex VAT)

AED 10.132

Each (On a Reel of 3000) (inc VAT)

N-Channel MOSFET, 100 A, 40 V, 8-Pin PowerPAK SO-8DC Vishay SIDR638DP-T1-RE3
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET® Gen IV

Package Type

PowerPAK SO-8DC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.00088 Ω, 0.00116 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more