N-Channel MOSFET, 8.4 A, 600 V, 3-Pin D2PAK Vishay SiHB186N60EF-GE3

RS Stock No.: 210-4973Brand: VishayManufacturers Part No.: SiHB186N60EF-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

8.4 A

Maximum Drain Source Voltage

600 V

Series

EF

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.168 Ω

Maximum Gate Threshold Voltage

3 → 5V

Number of Elements per Chip

1

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AED 9.45

Each (In a Tube of 50) (ex VAT)

AED 9.922

Each (In a Tube of 50) (inc VAT)

N-Channel MOSFET, 8.4 A, 600 V, 3-Pin D2PAK Vishay SiHB186N60EF-GE3

AED 9.45

Each (In a Tube of 50) (ex VAT)

AED 9.922

Each (In a Tube of 50) (inc VAT)

N-Channel MOSFET, 8.4 A, 600 V, 3-Pin D2PAK Vishay SiHB186N60EF-GE3
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Tube
50 - 50AED 9.45AED 472.50
100 - 200AED 7.95AED 397.50
250+AED 7.55AED 377.50

Ideate. Create. Collaborate

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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

8.4 A

Maximum Drain Source Voltage

600 V

Series

EF

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.168 Ω

Maximum Gate Threshold Voltage

3 → 5V

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more