Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
6.22mm
Length
6.73mm
Typical Gate Charge @ Vgs
6 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
2.38mm
Product details
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
AED 165.38
AED 3.308 Each (In a Tube of 50) (ex VAT)
AED 173.65
AED 3.473 Each (In a Tube of 50) (inc. VAT)
50
AED 165.38
AED 3.308 Each (In a Tube of 50) (ex VAT)
AED 173.65
AED 3.473 Each (In a Tube of 50) (inc. VAT)
50
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | AED 3.308 | AED 165.38 |
| 100 - 200 | AED 2.52 | AED 126.00 |
| 250+ | AED 2.31 | AED 115.50 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
6.22mm
Length
6.73mm
Typical Gate Charge @ Vgs
6 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
2.38mm
Product details


