Vishay D Series N-Channel MOSFET, 3 A, 500 V, 3-Pin DPAK SIHD3N50D-GE3

RS Stock No.: 145-1656Brand: VishayManufacturers Part No.: SIHD3N50D-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

500 V

Series

D Series

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

6.22mm

Length

6.73mm

Typical Gate Charge @ Vgs

6 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

2.38mm

Product details

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

AED 165.38

AED 3.308 Each (In a Tube of 50) (ex VAT)

AED 173.65

AED 3.473 Each (In a Tube of 50) (inc. VAT)

Vishay D Series N-Channel MOSFET, 3 A, 500 V, 3-Pin DPAK SIHD3N50D-GE3

AED 165.38

AED 3.308 Each (In a Tube of 50) (ex VAT)

AED 173.65

AED 3.473 Each (In a Tube of 50) (inc. VAT)

Vishay D Series N-Channel MOSFET, 3 A, 500 V, 3-Pin DPAK SIHD3N50D-GE3
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Tube
50 - 50AED 3.308AED 165.38
100 - 200AED 2.52AED 126.00
250+AED 2.31AED 115.50

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

500 V

Series

D Series

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

6.22mm

Length

6.73mm

Typical Gate Charge @ Vgs

6 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

2.38mm

Product details

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in