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N-Channel MOSFET, 5.3 A, 500 V, 3-Pin TO-220FP Vishay SIHF5N50D-E3

RS Stock No.: 145-1658Brand: VishayManufacturers Part No.: SIHF5N50D-E3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

5.3 A

Maximum Drain Source Voltage

500 V

Series

D Series

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.83mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.63mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Height

9.8mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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AED 222.50

AED 4.45 Each (In a Tube of 50) (ex VAT)

AED 233.62

AED 4.672 Each (In a Tube of 50) (inc. VAT)

N-Channel MOSFET, 5.3 A, 500 V, 3-Pin TO-220FP Vishay SIHF5N50D-E3

AED 222.50

AED 4.45 Each (In a Tube of 50) (ex VAT)

AED 233.62

AED 4.672 Each (In a Tube of 50) (inc. VAT)

N-Channel MOSFET, 5.3 A, 500 V, 3-Pin TO-220FP Vishay SIHF5N50D-E3
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

5.3 A

Maximum Drain Source Voltage

500 V

Series

D Series

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.83mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.63mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Height

9.8mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in