Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.3 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.83mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.63mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Height
9.8mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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AED 222.50
AED 4.45 Each (In a Tube of 50) (ex VAT)
AED 233.62
AED 4.672 Each (In a Tube of 50) (inc. VAT)
50
AED 222.50
AED 4.45 Each (In a Tube of 50) (ex VAT)
AED 233.62
AED 4.672 Each (In a Tube of 50) (inc. VAT)
50
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.3 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.83mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.63mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Height
9.8mm
Minimum Operating Temperature
-55 °C
Product details