Vishay E Series Dual N-Channel MOSFET, 35 A, 650 V, 3-Pin TO-247AC SiHG080N60E-GE3

RS Stock No.: 228-2864Brand: VishayManufacturers Part No.: SiHG080N60E-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

650 V

Series

E Series

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.08 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

2

Transistor Material

Si

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AED 49.24

AED 24.622 Each (In a Pack of 2) (ex VAT)

AED 51.70

AED 25.853 Each (In a Pack of 2) (inc. VAT)

Vishay E Series Dual N-Channel MOSFET, 35 A, 650 V, 3-Pin TO-247AC SiHG080N60E-GE3
Select packaging type

AED 49.24

AED 24.622 Each (In a Pack of 2) (ex VAT)

AED 51.70

AED 25.853 Each (In a Pack of 2) (inc. VAT)

Vishay E Series Dual N-Channel MOSFET, 35 A, 650 V, 3-Pin TO-247AC SiHG080N60E-GE3

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

QuantityUnit pricePer Pack
2 - 18AED 24.622AED 49.24
20 - 48AED 22.732AED 45.46
50 - 98AED 20.738AED 41.48
100 - 198AED 19.425AED 38.85
200+AED 17.325AED 34.65

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

650 V

Series

E Series

Package Type

TO-247AC

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.08 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

2

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more