N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-247AC Vishay SiHG33N60EF-GE3
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
33 A
Maximum Drain Source Voltage
600 V
Series
EF Series
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
98 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
278 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.87mm
Typical Gate Charge @ Vgs
103 nC @ 10 V
Width
5.31mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
20.82mm
Country of Origin
China
Product details
N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor
Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current
Low figure-of-merit (FOM)
Low input capacitance (Ciss)
Increased robustness due to low Reverse Recovery Charge
Ultra low gate charge (Qg)
MOSFET Transistors, Vishay Semiconductor
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AED 27.25
Each (Supplied in a Tube) (ex VAT)
AED 28.61
Each (Supplied in a Tube) (inc VAT)
Production pack (Tube)
1
AED 27.25
Each (Supplied in a Tube) (ex VAT)
AED 28.61
Each (Supplied in a Tube) (inc VAT)
Production pack (Tube)
1
Buy in bulk
| quantity | Unit price |
|---|---|
| 1 - 9 | AED 27.25 |
| 10 - 24 | AED 25.60 |
| 25 - 49 | AED 23.15 |
| 50 - 99 | AED 21.80 |
| 100+ | AED 20.40 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
33 A
Maximum Drain Source Voltage
600 V
Series
EF Series
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
98 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
278 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.87mm
Typical Gate Charge @ Vgs
103 nC @ 10 V
Width
5.31mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
20.82mm
Country of Origin
China
Product details
N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor
Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current
Low figure-of-merit (FOM)
Low input capacitance (Ciss)
Increased robustness due to low Reverse Recovery Charge
Ultra low gate charge (Qg)
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products