Vishay E Series N-Channel MOSFET, 35 A, 650 V, 3-Pin TO-220AB SiHP080N60E-GE3

RS Stock No.: 228-2874Brand: VishayManufacturers Part No.: SiHP080N60E-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220AB

Series

E Series

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.08 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Transistor Material

Si

Number of Elements per Chip

1

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AED 630.00

AED 12.60 Each (In a Tube of 50) (ex VAT)

AED 661.50

AED 13.23 Each (In a Tube of 50) (inc. VAT)

Vishay E Series N-Channel MOSFET, 35 A, 650 V, 3-Pin TO-220AB SiHP080N60E-GE3

AED 630.00

AED 12.60 Each (In a Tube of 50) (ex VAT)

AED 661.50

AED 13.23 Each (In a Tube of 50) (inc. VAT)

Vishay E Series N-Channel MOSFET, 35 A, 650 V, 3-Pin TO-220AB SiHP080N60E-GE3

Stock information temporarily unavailable.

Stock information temporarily unavailable.

QuantityUnit pricePer Tube
50 - 50AED 12.60AED 630.00
100 - 200AED 11.812AED 590.62
250+AED 10.71AED 535.50

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Click here to find out more

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220AB

Series

E Series

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.08 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Transistor Material

Si

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more