Vishay E Series N-Channel MOSFET, 35 A, 650 V, 3-Pin TO-220AB SiHP080N60E-GE3

RS Stock No.: 228-2875Brand: VishayManufacturers Part No.: SiHP080N60E-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

650 V

Series

E Series

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.08 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

Si

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AED 43.68

AED 21.84 Each (In a Pack of 2) (ex VAT)

AED 45.86

AED 22.932 Each (In a Pack of 2) (inc. VAT)

Vishay E Series N-Channel MOSFET, 35 A, 650 V, 3-Pin TO-220AB SiHP080N60E-GE3
Select packaging type

AED 43.68

AED 21.84 Each (In a Pack of 2) (ex VAT)

AED 45.86

AED 22.932 Each (In a Pack of 2) (inc. VAT)

Vishay E Series N-Channel MOSFET, 35 A, 650 V, 3-Pin TO-220AB SiHP080N60E-GE3

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

QuantityUnit pricePer Pack
2 - 18AED 21.84AED 43.68
20 - 48AED 20.212AED 40.42
50 - 98AED 19.53AED 39.06
100 - 198AED 18.742AED 37.48
200+AED 17.745AED 35.49

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

650 V

Series

E Series

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.08 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more