N-Channel MOSFET, 12 A, 18 A, 650 V, 3-Pin TO-220AB Vishay SIHP186N60EF-GE3

RS Stock No.: 200-6818Brand: VishayManufacturers Part No.: SIHP186N60EF-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

12 A, 18 A

Maximum Drain Source Voltage

650 V

Series

EF

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.193 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

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AED 8.60

Each (On a Reel of 50) (ex VAT)

AED 9.03

Each (On a Reel of 50) (inc VAT)

N-Channel MOSFET, 12 A, 18 A, 650 V, 3-Pin TO-220AB Vishay SIHP186N60EF-GE3

AED 8.60

Each (On a Reel of 50) (ex VAT)

AED 9.03

Each (On a Reel of 50) (inc VAT)

N-Channel MOSFET, 12 A, 18 A, 650 V, 3-Pin TO-220AB Vishay SIHP186N60EF-GE3
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

12 A, 18 A

Maximum Drain Source Voltage

650 V

Series

EF

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.193 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more