Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
400 V
Series
D Series
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.51mm
Typical Gate Charge @ Vgs
9 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
AED 25.46
AED 5.092 Each (In a Pack of 5) (ex VAT)
AED 26.73
AED 5.347 Each (In a Pack of 5) (inc. VAT)
Standard
5
AED 25.46
AED 5.092 Each (In a Pack of 5) (ex VAT)
AED 26.73
AED 5.347 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 45 | AED 5.092 | AED 25.46 |
| 50 - 245 | AED 4.988 | AED 24.94 |
| 250 - 495 | AED 3.832 | AED 19.16 |
| 500 - 1245 | AED 3.57 | AED 17.85 |
| 1250+ | AED 3.15 | AED 15.75 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
400 V
Series
D Series
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.51mm
Typical Gate Charge @ Vgs
9 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details


