Vishay E Series N-Channel MOSFET, 5 A, 850 V, 3-Pin TO-220AB SiHP6N80AE-GE3

RS Stock No.: 228-2880Brand: VishayManufacturers Part No.: SiHP6N80AE-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

850 V

Series

E Series

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.95 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Si

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AED 252.00

AED 5.04 Each (In a Tube of 50) (ex VAT)

AED 264.60

AED 5.292 Each (In a Tube of 50) (inc. VAT)

Vishay E Series N-Channel MOSFET, 5 A, 850 V, 3-Pin TO-220AB SiHP6N80AE-GE3

AED 252.00

AED 5.04 Each (In a Tube of 50) (ex VAT)

AED 264.60

AED 5.292 Each (In a Tube of 50) (inc. VAT)

Vishay E Series N-Channel MOSFET, 5 A, 850 V, 3-Pin TO-220AB SiHP6N80AE-GE3

Stock information temporarily unavailable.

Stock information temporarily unavailable.

QuantityUnit pricePer Tube
50 - 50AED 5.04AED 252.00
100 - 200AED 4.252AED 212.62
250+AED 3.78AED 189.00

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

850 V

Series

E Series

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.95 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more