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N-Channel MOSFET, 8.7 A, 500 V, 3-Pin TO-220AB Vishay SIHP8N50D-GE3

RS Stock No.: 787-9181Brand: VishayManufacturers Part No.: SIHP8N50D-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

8.7 A

Maximum Drain Source Voltage

500 V

Series

D Series

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

850 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

156 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.51mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Width

4.65mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

9.01mm

Product details

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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AED 28.25

AED 5.65 Each (In a Pack of 5) (ex VAT)

AED 29.66

AED 5.932 Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 8.7 A, 500 V, 3-Pin TO-220AB Vishay SIHP8N50D-GE3
Select packaging type

AED 28.25

AED 5.65 Each (In a Pack of 5) (ex VAT)

AED 29.66

AED 5.932 Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 8.7 A, 500 V, 3-Pin TO-220AB Vishay SIHP8N50D-GE3
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
5 - 45AED 5.65AED 28.25
50 - 120AED 5.10AED 25.50
125 - 245AED 4.65AED 23.25
250 - 495AED 4.40AED 22.00
500+AED 4.20AED 21.00

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

8.7 A

Maximum Drain Source Voltage

500 V

Series

D Series

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

850 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

156 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.51mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Width

4.65mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

9.01mm

Product details

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more