Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
8.7 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
10.51mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.65mm
Transistor Material
Si
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
AED 34.91
AED 6.982 Each (In a Pack of 5) (ex VAT)
AED 36.66
AED 7.331 Each (In a Pack of 5) (inc. VAT)
Standard
5
AED 34.91
AED 6.982 Each (In a Pack of 5) (ex VAT)
AED 36.66
AED 7.331 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 45 | AED 6.982 | AED 34.91 |
| 50 - 120 | AED 6.30 | AED 31.50 |
| 125 - 245 | AED 5.565 | AED 27.82 |
| 250 - 495 | AED 5.25 | AED 26.25 |
| 500+ | AED 4.935 | AED 24.68 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
8.7 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
10.51mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.65mm
Transistor Material
Si
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details


