Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
80 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
6.25mm
Typical Gate Charge @ Vgs
69.5 nC @ 10 V
Width
5.26mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Minimum Operating Temperature
-55 °C
Height
1.12mm
Series
TrenchFET
Product details
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
AED 9.80
Each (In a Pack of 2) (ex VAT)
AED 10.29
Each (In a Pack of 2) (inc VAT)
2
AED 9.80
Each (In a Pack of 2) (ex VAT)
AED 10.29
Each (In a Pack of 2) (inc VAT)
2
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
2 - 18 | AED 9.80 | AED 19.60 |
20 - 98 | AED 9.20 | AED 18.40 |
100 - 198 | AED 8.30 | AED 16.60 |
200 - 498 | AED 7.85 | AED 15.70 |
500+ | AED 7.35 | AED 14.70 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
80 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
6.25mm
Typical Gate Charge @ Vgs
69.5 nC @ 10 V
Width
5.26mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Minimum Operating Temperature
-55 °C
Height
1.12mm
Series
TrenchFET
Product details