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Vishay ThunderFET N-Channel MOSFET, 30 A, 80 V, 8-Pin PowerPAK 1212-8 SIS468DN-T1-GE3

RS Stock No.: 165-7076Brand: VishayManufacturers Part No.: SIS468DN-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

80 V

Package Type

PowerPAK 1212-8

Series

ThunderFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

32 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

18.1 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

3.4mm

Length

3.4mm

Minimum Operating Temperature

-55 °C

Height

1.12mm

Product details

N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

AED 7,087.50

AED 2.362 Each (On a Reel of 3000) (ex VAT)

AED 7,441.88

AED 2.48 Each (On a Reel of 3000) (inc. VAT)

Vishay ThunderFET N-Channel MOSFET, 30 A, 80 V, 8-Pin PowerPAK 1212-8 SIS468DN-T1-GE3

AED 7,087.50

AED 2.362 Each (On a Reel of 3000) (ex VAT)

AED 7,441.88

AED 2.48 Each (On a Reel of 3000) (inc. VAT)

Vishay ThunderFET N-Channel MOSFET, 30 A, 80 V, 8-Pin PowerPAK 1212-8 SIS468DN-T1-GE3
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

80 V

Package Type

PowerPAK 1212-8

Series

ThunderFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

32 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

18.1 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

3.4mm

Length

3.4mm

Minimum Operating Temperature

-55 °C

Height

1.12mm

Product details

N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more