Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
80 V
Package Type
PowerPAK 1212-8
Series
ThunderFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
18.1 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
3.4mm
Length
3.4mm
Minimum Operating Temperature
-55 °C
Height
1.12mm
Product details
N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
AED 7,087.50
AED 2.362 Each (On a Reel of 3000) (ex VAT)
AED 7,441.88
AED 2.48 Each (On a Reel of 3000) (inc. VAT)
3000
AED 7,087.50
AED 2.362 Each (On a Reel of 3000) (ex VAT)
AED 7,441.88
AED 2.48 Each (On a Reel of 3000) (inc. VAT)
3000
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Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
80 V
Package Type
PowerPAK 1212-8
Series
ThunderFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
18.1 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
3.4mm
Length
3.4mm
Minimum Operating Temperature
-55 °C
Height
1.12mm
Product details