N-Channel MOSFET, 63 A, 80 V, 8-Pin PowerPAK 1212-8S Vishay SiSS32LDN-T1-GE3

RS Stock No.: 200-6859Brand: VishayManufacturers Part No.: SiSS32LDN-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

63 A

Maximum Drain Source Voltage

80 V

Package Type

PowerPAK 1212-8S

Pin Count

8

Maximum Drain Source Resistance

0.0072 Ω, 0.0095 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Number of Elements per Chip

1

Series

TrenchFET® Gen IV

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AED 2.35

Each (On a Reel of 3000) (ex VAT)

AED 2.468

Each (On a Reel of 3000) (inc VAT)

N-Channel MOSFET, 63 A, 80 V, 8-Pin PowerPAK 1212-8S Vishay SiSS32LDN-T1-GE3

3000

Available in multiples of 3000
3000AED 7,050.00
6000AED 14,100.00
9000AED 21,150.00
12000AED 28,200.00
15000AED 35,250.00
18000AED 42,300.00
21000AED 49,350.00
24000AED 56,400.00
27000AED 63,450.00
30000AED 70,500.00
33000AED 77,550.00
36000AED 84,600.00
39000AED 91,650.00
42000AED 98,700.00
45000AED 105,750.00

AED 2.35

Each (On a Reel of 3000) (ex VAT)

AED 2.468

Each (On a Reel of 3000) (inc VAT)

N-Channel MOSFET, 63 A, 80 V, 8-Pin PowerPAK 1212-8S Vishay SiSS32LDN-T1-GE3
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000AED 7,050.00
6000AED 14,100.00
9000AED 21,150.00
12000AED 28,200.00
15000AED 35,250.00
18000AED 42,300.00
21000AED 49,350.00
24000AED 56,400.00
27000AED 63,450.00
30000AED 70,500.00
33000AED 77,550.00
36000AED 84,600.00
39000AED 91,650.00
42000AED 98,700.00
45000AED 105,750.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

63 A

Maximum Drain Source Voltage

80 V

Package Type

PowerPAK 1212-8S

Pin Count

8

Maximum Drain Source Resistance

0.0072 Ω, 0.0095 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Number of Elements per Chip

1

Series

TrenchFET® Gen IV

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more