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Vishay Dual N-Channel MOSFET, 20 A, 60 A, 40 (Channel 1) V, 40 (Channel 2) V, 6-Pin PowerPAK SO-8L Dual SQJ208EP-T1_GE3

RS Stock No.: 188-4915Brand: VishayManufacturers Part No.: SQJ208EP-T1_GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

20 A, 60 A

Maximum Drain Source Voltage

40 (Channel 1) V, 40 (Channel 2) V

Package Type

PowerPAK SO-8L Dual

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

0.0067 (Channel 2) Ω, 0.016 (Channel 1) Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3 (Channel 1) V, 2.4 (Channel 2) V

Minimum Gate Threshold Voltage

1.3 (Channel 1) V, 1.4 (Channel 2) V

Maximum Power Dissipation

27 W, 48 W

Transistor Configuration

Dual

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Width

4.47mm

Length

5mm

Typical Gate Charge @ Vgs

22 nC @ 10 V (Channel 1), 48.2 nC @ 10 V (Channel 2)

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

1.01mm

Automotive Standard

AEC-Q101

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Stock information temporarily unavailable.

AED 8,032.50

AED 2.678 Each (On a Reel of 3000) (ex VAT)

AED 8,434.12

AED 2.812 Each (On a Reel of 3000) (inc. VAT)

Vishay Dual N-Channel MOSFET, 20 A, 60 A, 40 (Channel 1) V, 40 (Channel 2) V, 6-Pin PowerPAK SO-8L Dual SQJ208EP-T1_GE3

AED 8,032.50

AED 2.678 Each (On a Reel of 3000) (ex VAT)

AED 8,434.12

AED 2.812 Each (On a Reel of 3000) (inc. VAT)

Vishay Dual N-Channel MOSFET, 20 A, 60 A, 40 (Channel 1) V, 40 (Channel 2) V, 6-Pin PowerPAK SO-8L Dual SQJ208EP-T1_GE3
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

20 A, 60 A

Maximum Drain Source Voltage

40 (Channel 1) V, 40 (Channel 2) V

Package Type

PowerPAK SO-8L Dual

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

0.0067 (Channel 2) Ω, 0.016 (Channel 1) Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3 (Channel 1) V, 2.4 (Channel 2) V

Minimum Gate Threshold Voltage

1.3 (Channel 1) V, 1.4 (Channel 2) V

Maximum Power Dissipation

27 W, 48 W

Transistor Configuration

Dual

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

2

Width

4.47mm

Length

5mm

Typical Gate Charge @ Vgs

22 nC @ 10 V (Channel 1), 48.2 nC @ 10 V (Channel 2)

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

1.01mm

Automotive Standard

AEC-Q101

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more