Vishay 100V 12A, Schottky Diode, 3-Pin TO-277A V12P10-M3/86A
Technical Document
Specifications
Brand
VishayMounting Type
Surface Mount
Package Type
TO-277A
Maximum Continuous Forward Current
12A
Peak Reverse Repetitive Voltage
100V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
3
Number of Elements per Chip
1
Diode Technology
Schottky Barrier
Peak Non-Repetitive Forward Surge Current
200A
Country of Origin
China
Product details
TMBS - Trench MOS Barrier Schottky Rectifiers, Up to 20A, Vishay Semiconductor
The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over planar Schottky rectifiers. At operating voltages of 45V and above planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds.
Features
Patented Trench Structure
Improved efficiency in AC/DC Switched mode-power supplies and DC/DC converters
High power density and low forward voltage
Schottky Rectifiers, Vishay Semiconductor
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AED 2,520.00
AED 1.68 Each (On a Reel of 1500) (ex VAT)
AED 2,646.00
AED 1.764 Each (On a Reel of 1500) (inc. VAT)
1500
AED 2,520.00
AED 1.68 Each (On a Reel of 1500) (ex VAT)
AED 2,646.00
AED 1.764 Each (On a Reel of 1500) (inc. VAT)
1500
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Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
VishayMounting Type
Surface Mount
Package Type
TO-277A
Maximum Continuous Forward Current
12A
Peak Reverse Repetitive Voltage
100V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
3
Number of Elements per Chip
1
Diode Technology
Schottky Barrier
Peak Non-Repetitive Forward Surge Current
200A
Country of Origin
China
Product details
TMBS - Trench MOS Barrier Schottky Rectifiers, Up to 20A, Vishay Semiconductor
The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over planar Schottky rectifiers. At operating voltages of 45V and above planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds.
Features
Patented Trench Structure
Improved efficiency in AC/DC Switched mode-power supplies and DC/DC converters
High power density and low forward voltage
Schottky Rectifiers, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products