Technical Documents
Specifications
Brand
VishayProduct Type
Rectifier & Schottky Diode
Mount Type
Surface
Package Type
TO-263
Maximum Continuous Forward Current If
4A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Single
Series
VS-3C04ET07
Rectifier Type
SiC Merged PIN Schottky
Pin Count
3
Peak Reverse Current Ir
25μA
Maximum Forward Voltage Vf
1.85V
Minimum Operating Temperature
-55°C
Peak Non-Repetitive Forward Surge Current Ifsm
29A
Maximum Operating Temperature
175°C
Length
10.67mm
Height
4.83mm
Standards/Approvals
UL, RoHS
Width
11.3mm
Automotive Standard
No
Product Details
The Vishay 650 V power SiC Gen 3 merged PIN schottky diode. It comes with improved VF and efficiency by thin wafer technology. Majority carrier diode using Schottky technology on SiC wide band gap material.
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Stock information temporarily unavailable.
AED 28.36
AED 14.178 Each (In a Pack of 2) (ex VAT)
AED 29.78
AED 14.887 Each (In a Pack of 2) (inc. VAT)
Standard
2
AED 28.36
AED 14.178 Each (In a Pack of 2) (ex VAT)
AED 29.78
AED 14.887 Each (In a Pack of 2) (inc. VAT)
Stock information temporarily unavailable.
Standard
2
| Quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 18 | AED 14.178 | AED 28.36 |
| 20 - 48 | AED 11.502 | AED 23.00 |
| 50 - 98 | AED 10.165 | AED 20.33 |
| 100 - 248 | AED 9.47 | AED 18.94 |
| 250+ | AED 8.828 | AED 17.66 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
VishayProduct Type
Rectifier & Schottky Diode
Mount Type
Surface
Package Type
TO-263
Maximum Continuous Forward Current If
4A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Single
Series
VS-3C04ET07
Rectifier Type
SiC Merged PIN Schottky
Pin Count
3
Peak Reverse Current Ir
25μA
Maximum Forward Voltage Vf
1.85V
Minimum Operating Temperature
-55°C
Peak Non-Repetitive Forward Surge Current Ifsm
29A
Maximum Operating Temperature
175°C
Length
10.67mm
Height
4.83mm
Standards/Approvals
UL, RoHS
Width
11.3mm
Automotive Standard
No
Product Details
The Vishay 650 V power SiC Gen 3 merged PIN schottky diode. It comes with improved VF and efficiency by thin wafer technology. Majority carrier diode using Schottky technology on SiC wide band gap material.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
