Wolfspeed Type N-Channel MOSFET, 19 A, 1200 V Enhancement, 3-Pin TO-247 C2M0160120D
Technical Document
Specifications
Brand
WolfspeedProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
19A
Maximum Drain Source Voltage Vds
1200V
Package Type
TO-247
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
196mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
125W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
34nC
Forward Voltage Vf
3.9V
Maximum Operating Temperature
150°C
Width
5.21 mm
Height
21.1mm
Length
16.13mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product details
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
MOSFET Transistors, Wolfspeed
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Stock information temporarily unavailable.
AED 57.41
AED 57.41 Each (ex VAT)
AED 60.28
AED 60.28 Each (inc. VAT)
Standard
1
AED 57.41
AED 57.41 Each (ex VAT)
AED 60.28
AED 60.28 Each (inc. VAT)
Stock information temporarily unavailable.
Standard
1
| Quantity | Unit price |
|---|---|
| 1 - 4 | AED 57.41 |
| 5 - 9 | AED 55.21 |
| 10 - 29 | AED 54.62 |
| 30 - 59 | AED 54.09 |
| 60+ | AED 53.61 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
WolfspeedProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
19A
Maximum Drain Source Voltage Vds
1200V
Package Type
TO-247
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
196mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
125W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
34nC
Forward Voltage Vf
3.9V
Maximum Operating Temperature
150°C
Width
5.21 mm
Height
21.1mm
Length
16.13mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product details
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
MOSFET Transistors, Wolfspeed
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products