Wolfspeed Type N-Channel MOSFET, 5.3 A, 1700 V Enhancement, 7-Pin TO-263
Technical Document
Specifications
Brand
WolfspeedProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
5.3A
Maximum Drain Source Voltage Vds
1700V
Package Type
TO-263
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
1.4Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
78W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
13nC
Forward Voltage Vf
3.8V
Maximum Operating Temperature
150°C
Height
4.57mm
Length
10.23mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product details
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
MOSFET Transistors, Wolfspeed
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Stock information temporarily unavailable.
AED 2,059.75
AED 41.195 Each (In a Tube of 50) (ex VAT)
AED 2,162.74
AED 43.255 Each (In a Tube of 50) (inc. VAT)
50
AED 2,059.75
AED 41.195 Each (In a Tube of 50) (ex VAT)
AED 2,162.74
AED 43.255 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Document
Specifications
Brand
WolfspeedProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
5.3A
Maximum Drain Source Voltage Vds
1700V
Package Type
TO-263
Mount Type
Surface
Pin Count
7
Maximum Drain Source Resistance Rds
1.4Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
78W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
13nC
Forward Voltage Vf
3.8V
Maximum Operating Temperature
150°C
Height
4.57mm
Length
10.23mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product details
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
MOSFET Transistors, Wolfspeed
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products