SiC N-Channel MOSFET, 35 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0065090J
Technical Document
Specifications
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
900 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
78 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
113 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+25 V
Length
10.23mm
Typical Gate Charge @ Vgs
30 nC @ 15 V
Width
10.99mm
Transistor Material
SiC
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
4.57mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4.4V
Country of Origin
China
Product details
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
MOSFET Transistors, Wolfspeed
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AED 62.25
Each (ex VAT)
AED 65.36
Each (inc VAT)
1
AED 62.25
Each (ex VAT)
AED 65.36
Each (inc VAT)
1
Buy in bulk
| quantity | Unit price |
|---|---|
| 1 - 9 | AED 62.25 |
| 10 - 24 | AED 55.95 |
| 25 - 49 | AED 54.40 |
| 50 - 99 | AED 53.05 |
| 100+ | AED 51.80 |
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Technical Document
Specifications
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
900 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
78 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
113 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+25 V
Length
10.23mm
Typical Gate Charge @ Vgs
30 nC @ 15 V
Width
10.99mm
Transistor Material
SiC
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
4.57mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4.4V
Country of Origin
China
Product details
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
MOSFET Transistors, Wolfspeed
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products