SiC N-Channel MOSFET, 23 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0120090D
Technical Document
Specifications
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
900 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
97 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +18 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
16.13mm
Typical Gate Charge @ Vgs
17.3 nC @ 15 V
Width
21.1mm
Transistor Material
SiC
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4.8V
Height
5.21mm
Country of Origin
China
Product details
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
MOSFET Transistors, Wolfspeed
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AED 38.90
Each (ex VAT)
AED 40.84
Each (inc VAT)
1
AED 38.90
Each (ex VAT)
AED 40.84
Each (inc VAT)
1
Buy in bulk
| quantity | Unit price |
|---|---|
| 1 - 4 | AED 38.90 |
| 5 - 9 | AED 36.50 |
| 10 - 29 | AED 35.70 |
| 30 - 89 | AED 35.30 |
| 90+ | AED 35.00 |
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Technical Document
Specifications
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
900 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
97 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +18 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
16.13mm
Typical Gate Charge @ Vgs
17.3 nC @ 15 V
Width
21.1mm
Transistor Material
SiC
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4.8V
Height
5.21mm
Country of Origin
China
Product details
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
• Enhancement-mode N-channel SiC technology
• High Drain-Source breakdown voltages - up to 1200V
• Multiple devices are easy to parallel and simple to drive
• High speed switching with low on-resistance
• Latch-up resistant operation
MOSFET Transistors, Wolfspeed
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products