Wolfspeed Dual SiC N-Channel MOSFET, 325 A, 1700 V, 7-Pin Half Bridge CAS300M17BM2
Technical Document
Specifications
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
325 A
Maximum Drain Source Voltage
1700 V
Package Type
Half Bridge
Mounting Type
Screw Mount
Pin Count
7
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
1.76 kW
Transistor Configuration
Series
Maximum Gate Source Voltage
-10 V, +25 V
Width
61.4mm
Transistor Material
SiC
Number of Elements per Chip
2
Length
106.4mm
Typical Gate Charge @ Vgs
1076 nC @ 20 V, 1076 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
30mm
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
2.5V
Product details
Wolfspeed Silicon Carbide Power MOSFET Modules
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.
• MOSFET turn-off tail current and diode reverse recovery current are effectively zero.
• Ultra low loss high-frequency operation
• Ease of paralleling due to SiC characteristics
• Normally-off, fail-safe operation
• Copper baseplate and aluminium nitride insulator reduce thermal requirements
MOSFET Transistors, Wolfspeed
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AED 5,687.04
AED 5,687.04 Each (ex VAT)
AED 5,971.39
AED 5,971.39 Each (inc. VAT)
1
AED 5,687.04
AED 5,687.04 Each (ex VAT)
AED 5,971.39
AED 5,971.39 Each (inc. VAT)
1
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Technical Document
Specifications
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
325 A
Maximum Drain Source Voltage
1700 V
Package Type
Half Bridge
Mounting Type
Screw Mount
Pin Count
7
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
1.76 kW
Transistor Configuration
Series
Maximum Gate Source Voltage
-10 V, +25 V
Width
61.4mm
Transistor Material
SiC
Number of Elements per Chip
2
Length
106.4mm
Typical Gate Charge @ Vgs
1076 nC @ 20 V, 1076 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
30mm
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
2.5V
Product details
Wolfspeed Silicon Carbide Power MOSFET Modules
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.
• MOSFET turn-off tail current and diode reverse recovery current are effectively zero.
• Ultra low loss high-frequency operation
• Ease of paralleling due to SiC characteristics
• Normally-off, fail-safe operation
• Copper baseplate and aluminium nitride insulator reduce thermal requirements
MOSFET Transistors, Wolfspeed
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products