IGBT Transistors

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Part Details Brand Maximum Continuous Collector Current Maximum Collector Emitter Voltage Maximum Gate Emitter Voltage Maximum Power Dissipation Number of Transistors Package Type Mounting Type Channel Type Pin Count Switching Speed Transistor Configuration Length Width Height Dimensions Energy Rating Gate Capacitance Maximum Operating Temperature Minimum Operating Temperature Automotive Standard
Infineon IKQ40N120CH3 P-channel IGBT, 80 A 1200 V, 3-Pin TO-247 Infineon 80 A 1200 V ±30V 500 W 1 TO-247 Through Hole P 3 60kHz Single 15.9mm 5.1mm 21.1mm 15.9 x 5.1 x 21.1mm 4.6 2385pF +175 °C -40 °C -
Infineon IKQ40N120CH3 P-channel IGBT, 80 A 1200 V, 3-Pin TO-247 Infineon 80 A 1200 V ±30V 500 W 1 TO-247 Through Hole P 3 60kHz Single 15.9mm 5.1mm 21.1mm 15.9 x 5.1 x 21.1mm 4.6 2385pF +175 °C -40 °C -
Infineon IKQ50N120CH3 P-channel IGBT, 100 A 1200 V, 3-Pin TO-247 Infineon 100 A 1200 V ±30V 652 W 1 TO-247 Through Hole P 3 60kHz Single 15.9mm 5.1mm 21.1mm 15.9 x 5.1 x 21.1mm 4.9 3269pF +175 °C -40 °C -
Infineon IKQ50N120CH3 P-channel IGBT, 100 A 1200 V, 3-Pin TO-247 Infineon 100 A 1200 V ±30V 652 W 1 TO-247 Through Hole P 3 60kHz Single 15.9mm 5.1mm 21.1mm 15.9 x 5.1 x 21.1mm 4.9 3269pF +175 °C -40 °C -
Infineon IKQ75N120CH3 P-channel IGBT, 150 A 1200 V, 3-Pin TO-247 Infineon 150 A 1200 V ±30V 938 W 1 TO-247 Through Hole P 3 60kHz Single 15.9mm 5.1mm 21.1mm 15.9 x 5.1 x 21.1mm 9.2 4856pF +175 °C -40 °C -
Infineon IKQ75N120CH3 P-channel IGBT, 150 A 1200 V, 3-Pin TO-247 Infineon 150 A 1200 V ±30V 938 W 1 TO-247 Through Hole P 3 60kHz Single 15.9mm 5.1mm 21.1mm 15.9 x 5.1 x 21.1mm 9.2 4856pF +175 °C -40 °C -
Infineon IKY40N120CH3 P-channel IGBT, 80 A 1200 V, 4-Pin TO-247 Infineon 80 A 1200 V ±30V 500 W 1 TO-247 Through Hole P 4 60kHz Single 15.9mm 5.1mm 22.5mm 15.9 x 5.1 x 22.5mm 3.48 2385pF +175 °C -40 °C -
Infineon IKY40N120CH3 P-channel IGBT, 80 A 1200 V, 4-Pin TO-247 Infineon 80 A 1200 V ±30V 500 W 1 TO-247 Through Hole P 4 60kHz Single 15.9mm 5.1mm 22.5mm 15.9 x 5.1 x 22.5mm 3.48 2385pF +175 °C -40 °C -
Infineon IKY50N120CH3 P-channel IGBT, 100 A 1200 V, 4-Pin TO-247 Infineon 100 A 1200 V ±30V 652 W 1 TO-247 Through Hole P 4 60kHz Single 15.9mm 5.1mm 22.5mm 15.9 x 5.1 x 22.5mm 4.2 3269pF +175 °C -40 °C -
Infineon IKY50N120CH3 P-channel IGBT, 100 A 1200 V, 4-Pin TO-247 Infineon 100 A 1200 V ±30V 652 W 1 TO-247 Through Hole P 4 60kHz Single 15.9mm 5.1mm 22.5mm 15.9 x 5.1 x 22.5mm 4.2 3269pF +175 °C -40 °C -
Infineon IKY75N120CH3 P-channel IGBT, 150 A 1200 V, 4-Pin TO-247 Infineon 150 A 1200 V ±30V 938 W 1 TO-247 Through Hole P 4 60kHz Single 15.9mm 5.1mm 22.5mm 15.9 x 5.1 x 22.5mm 6.3 4856pF +175 °C -40 °C -
Infineon IKY75N120CH3 P-channel IGBT, 150 A 1200 V, 4-Pin TO-247 Infineon 150 A 1200 V ±30V 938 W 1 TO-247 Through Hole P 4 60kHz Single 15.9mm 5.1mm 22.5mm 15.9 x 5.1 x 22.5mm 6.3 4856pF +175 °C -40 °C -
Infineon IKZ50N65ES5 P-channel IGBT, 80 A 650 V, 4-Pin TO-247 Infineon 80 A 650 V ±30V 274 W 1 TO-247 Through Hole P 4 40kHz Single 15.9mm 5.1mm 22.5mm 15.9 x 5.1 x 22.5mm 1.65 3100pF +175 °C -40 °C -
Infineon IKZ50N65ES5 P-channel IGBT, 80 A 650 V, 4-Pin TO-247 Infineon 80 A 650 V ±30V 274 W 1 TO-247 Through Hole P 4 40kHz Single 15.9mm 5.1mm 22.5mm 15.9 x 5.1 x 22.5mm 1.65 3100pF +175 °C -40 °C -
Infineon IKZ75N65ES5 P-channel IGBT, 80 A 650 V, 4-Pin TO-247 Infineon 80 A 650 V ±30V 395 W 1 TO-247 Through Hole P 4 40kHz Single 15.9mm 5.1mm 22.5mm 15.9 x 5.1 x 22.5mm 2.8 4500pF +175 °C -40 °C -
Infineon IKZ75N65ES5 P-channel IGBT, 80 A 650 V, 4-Pin TO-247 Infineon 80 A 650 V ±30V 395 W 1 TO-247 Through Hole P 4 40kHz Single 15.9mm 5.1mm 22.5mm 15.9 x 5.1 x 22.5mm 2.8 4500pF +175 °C -40 °C -
ON Semiconductor NGTB03N60R2DT4G IGBT, 9 A 600 V, 3-Pin DPAK (TO-252)
  • £ 0.379
  • Each (On a Reel of 2500)
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ON Semiconductor 9 A 600 V ±20V 49 W - DPAK (TO-252) Surface Mount N 3 1MHz Single 6.73mm 6.22mm 2.38mm 6.73 x 6.22 x 2.38mm - 415pF +175 °C - -
ON Semiconductor NGTB05N60R2DT4G IGBT, 16 A 600 V, 3-Pin DPAK (TO-252)
  • £ 0.378
  • Each (On a Reel of 2500)
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ON Semiconductor 16 A 600 V ±20V 56 W - DPAK (TO-252) Surface Mount N 3 1MHz Single 6.73mm 6.22mm 2.38mm 6.73 x 6.22 x 2.38mm - 740pF +175 °C - -
ON Semiconductor NGTB10N60R2DT4G IGBT, 20 A 600 V, 3-Pin DPAK (TO-252)
  • £ 0.701
  • Each (On a Reel of 2500)
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ON Semiconductor 20 A 600 V ±20V 72 W - DPAK (TO-252) Surface Mount N 3 1MHz Single 6.73mm 6.22mm 2.38mm 6.73 x 6.22 x 2.38mm - 1340pF +175 °C - -
ON Semiconductor NGTB20N135IHRWG IGBT, 40 A 1350 V, 3-Pin TO-247 ON Semiconductor 40 A 1350 V ±20V 394 W - TO-247 Through Hole N 3 1MHz Single 16.25mm 5.3mm 21.4mm 16.25 x 5.3 x 21.4mm - - +175 °C -40 °C -
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