MOSFET Transistors

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Part Details Brand Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Dimensions Typical Turn-Off Delay Time Series Typical Turn-On Delay Time Forward Transconductance Height Width Length Forward Diode Voltage Typical Power Gain Maximum Operating Temperature Number of Elements per Chip Minimum Operating Temperature Transistor Material
Toshiba T2N7002BK Dual N-channel MOSFET, 400 mA, 60 V, 3-Pin SOT-23
  • £ 0.024
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Toshiba N 400 mA 60 V 1.75 Ω 2.1V 1.1V ±20 V SOT-23 Surface Mount 3 - Enhancement - 1 W 26 pF @ 10 V 0.39 nC @ 4.5 V 2.9 x 1.3 x 0.9mm 38 ns - 5.5 ns - 0.9mm 1.3mm 2.9mm 1.1V - +150 °C 2 - -
Taiwan Semi TSM3N80CH C5G N-channel MOSFET, 3 A, 800 V, 3-Pin IPAK
  • £ 0.516
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Taiwan Semiconductor N 3 A 800 V 4.2 mΩ 4V 2V ±30 V TO-251 Through Hole 3 Single Enhancement Power MOSFET 94 W 696 pF @ 25 V 19 nC @ 10 V 6.5 x 2.3 x 7mm 106 ns - 48 ns - 7mm 2.3mm 6.5mm 1.5V - +150 °C 1 -55 °C -
Taiwan Semi TSM126CX RFG N-channel MOSFET, 30 mA, 600 V Depletion, 3-Pin SOT-23
  • £ 0.121
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Taiwan Semiconductor N 30 mA 600 V 800 Ω 1V 2.7V ±20 V SOT-23 Surface Mount 3 Single Depletion - 500 mW 51.42 pF @ 25 V 1.18 nC @ 5 V 2.9 x 1.6 x 1.1mm 57.2 ns - 10.01 ns 0.01S 1.1mm 1.6mm 2.9mm 1.2V - +150 °C 1 -55 °C -
Taiwan Semi TSM2308CX RFG N-channel MOSFET, 3 A, 60 V, 3-Pin SOT-23
  • £ 0.121
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Taiwan Semiconductor N 3 A 60 V 192 mΩ 2.5V 1.2V ±20 V SOT-23 Surface Mount 3 Single Enhancement - 1.25 W 511 pF @ 15 V 3.99 nC @ 4.5 V 3 x 1.4 x 1.05mm 14.2 ns - 5.3 ns - 1.05mm 1.4mm 3mm 1.2V - +150 °C 1 -55 °C -
Nexperia PMV20XNER N-channel MOSFET, 7.2 A, 30 V PMV20XNE, 3-Pin SOT-23
  • £ 0.095
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Nexperia N 7.2 A 30 V 38 mΩ 0.9V 0.4V 12 V TO-236AB Surface Mount 3 Single Enhancement Trench MOSFET 6.94 W 1150 pF @ 15 V 12.4 nC @ 4.5 V 3 x 1.4 x 1mm 33 ns PMV20XNE 8 ns 11s 1mm 1.4mm 3mm - - +150 °C 1 -55 °C -
Taiwan Semi TSM2328CX RFG N-channel MOSFET, 1.5 A, 100 V, 3-Pin SOT-23
  • £ 0.197
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Taiwan Semiconductor N 1.5 A 100 V 250 mΩ 2.5V 1V ±20 V SOT-23 Surface Mount 3 Single Enhancement - 1.38 W 975 pF @ 25 V 11.1 nC @ 5 V 2.9 x 1.6 x 1.1mm 26.8 ns - 9 ns - 1.1mm 1.6mm 2.9mm - - +150 °C 1 - -
Taiwan Semi TSM2303CX RFG P-channel MOSFET, 1.3 A, 30 V, 3-Pin SOT-23
  • £ 0.073
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Taiwan Semiconductor P 1.3 A 30 V 300 mΩ 3V 1V ±20 V SOT-23 Surface Mount 3 Single Enhancement - 700 mW 565 pF @ -10 V 10 nC @ 4.5 V 3.1 x 1.7 x 1.2mm 27 ns - 10 ns 5s 1.2mm 1.7mm 3.1mm 1.2V - +150 °C 1 -55 °C -
Infineon BSC050N03LSGATMA1 N-channel MOSFET, 80 A, 30 V BSC050N03LS G, 8-Pin TDSON
  • £ 0.276
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Infineon N 80 A 30 V 7.5 mΩ 2.2V 1V 20 V TDSON Surface Mount 8 Single Enhancement Power MOSFET 50 W 2100 pF @ 15 V 13 nC @ 4.5 V 5.49 x 6.35 x 1.1mm 21 ns BSC050N03LS G 5.2 ns 76s 1.1mm 6.35mm 5.49mm 1.1V - +150 °C 1 -55 °C -
Infineon BSC050N04LSGATMA1 N-channel MOSFET, 85 A, 40 V BSC050N04LS G, 8-Pin TDSON
  • £ 0.299
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Infineon N 85 A 40 V 7.2 mΩ 2V 1.2V 20 V TDSON Surface Mount 8 Single Enhancement Power MOSFET 57 W 2800 pF @ 20 V 36 nC @ 10 V 5.49 x 6.35 x 1.1mm 26 ns BSC050N04LS G 6.4 ns 100s 1.1mm 6.35mm 5.49mm 1.2V - +150 °C 1 -55 °C -
Taiwan Semi TSM2309CX RFG P-channel MOSFET, 3.1 A, 60 V, 3-Pin SOT-23
  • £ 0.085
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Taiwan Semiconductor P 3.1 A 60 V 240 mΩ 2.5V 1.2V ±20 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 1.56 W 425 pF @ -30 V 8.2 nC @ 10 V 2.9 x 1.6 x 0.95mm 35 ns - 5.2 ns 3.5s 0.95mm 1.6mm 2.9mm 1V - +150 °C 1 - -
Toshiba SSM6N43FU Dual N-channel MOSFET, 500 mA, 20 V, 6-Pin SOT-363
  • £ 0.068
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Toshiba N 500 mA 20 V 1.52 Ω 1V 0.35V ±10 V SOT-363 Surface Mount 6 - Enhancement - 200 mW 46 pF @ 10 V 1.23 nC @ 4 V 2 x 1.25 x 0.9mm 75 ns - 30 ns - 0.9mm 1.25mm 2mm - - +150 °C 2 - -
Toshiba SSM3K339R N-channel MOSFET, 2 A, 40 V, 3-Pin SOT-23F
  • £ 0.065
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Toshiba N 2 A 40 V 390 mΩ 1.2V - ±12 V SOT-23F Surface Mount 3 Single Enhancement - 2 W 130 pF @ 10 V 1.1 nC @ 4.2 V 2.9 x 1.8 x 0.7mm 8 ns - 13 ns - 0.7mm 1.8mm 2.9mm 1.2V - +150 °C 1 - -
Infineon IRF7205TRPBF P-channel MOSFET, 4.6 A, 30 V IRF7205PbF, 8-Pin SO
  • £ 0.223
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Infineon P 4.6 A 30 V 130 mΩ 3V 1V 20 V SO Surface Mount 8 Single Enhancement Power MOSFET 2.5 W 870 pF @ -10 V 27 nC @ 10 V 5 x 4 x 1.5mm 97 ns IRF7205PbF 14 ns 6.6s 1.5mm 4mm 5mm 1.2V - +150 °C 1 -55 °C -
Infineon IRF7343TRPBF N/P-channel MOSFET, 3.4 A, 4.7 A, 55 V Depletion IRF7343PbF, 8-Pin SO
  • £ 0.287
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Infineon N, P 3.4 A, 4.7 A 55 V 0.065 Ω, 0.17 Ω - 1V 20 V SO Surface Mount 8 - Depletion Power MOSFET 2 W 690 pF @ -25 V, 740 pF @ 25 V 2.3 nC @ 10 V, 24 nC @ 10 V 5 x 4 x 1.5mm 32 ns, 43 ns IRF7343PbF 8.3 ns, 14 ns - 1.5mm 4mm 5mm 1.2V - +150 °C 1 -55 °C -
Infineon IRF7470TRPBF N-channel MOSFET, 10 A, 40 V IRF7470PbF, 8-Pin SO
  • £ 0.452
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Infineon N 10 A 40 V 30 mΩ 2V 0.8V 12 V SO Surface Mount 8 Single Enhancement Power MOSFET 2.5 W 3430 pF @ 20 V 29 nC @ 4.5 V 5 x 4 x 1.5mm 21 ns IRF7470PbF 10 ns 27s 1.5mm 4mm 5mm 1.3V - +150 °C 1 -55 °C -
Infineon IRF7807ZTRPBF N-channel MOSFET, 11 A, 30 V IRF7807ZPbF, 8-Pin SO
  • £ 0.234
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Infineon N 11 A 30 V 18.2 mΩ 2.25V 1.35V 20 V SO Surface Mount 8 Single Enhancement Power MOSFET 2.5 W 770 pF @ 15 V 7.2 nC @ 4.5 V 5 x 4 x 1.5mm 10 ns IRF7807ZPbF 6.9 ns 22s 1.5mm 4mm 5mm 1V - +150 °C 1 -55 °C -
Toshiba SSM3J15FV P-channel MOSFET, 100 mA, 30 V, 3-Pin SOT-723
  • £ 0.062
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Toshiba P 100 mA 30 V 32 Ω 1.7V 1.1V ±20 V SOT-723 Surface Mount 3 Single Enhancement - 150 mW 9.1 pF @ 3 V - 0.8 x 1.2 x 0.5mm 175 ns - 65 ns - 0.5mm 1.2mm 0.8mm - - +150 °C 1 - -
Toshiba SSM3K37MFV,L3F(B N-channel MOSFET, 250 mA, 20 V, 3-Pin SOT-723 Toshiba N 250 mA 20 V 5.6 Ω 1V 0.35V ±10 V SOT-723 Surface Mount 3 Single Enhancement - 150 mW 12 pF @ 10 V - 0.8 x 1.2 x 0.5mm 36 ns - 18 ns - 0.5mm 1.2mm 0.8mm - - +150 °C 1 - -
Infineon BSR92PH6327XTSA1 P-channel MOSFET, 140 mA, 250 V BSR92P, 3-Pin SC-59
  • £ 0.113
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Infineon P 140 mA 250 V 20 Ω 1V 2V 20 V SC-59 Surface Mount 3 Single Enhancement Power MOSFET 500 mW 82 pF @ -25 V 3.6 nC @ 10 V 3 x 1.6 x 1.1mm 75 ns BSR92P 6.4 ns 0.3S 1.1mm 1.6mm 3mm 1.2V - +150 °C 1 -55 °C -
Infineon IRFR5305TRLPBF P-channel MOSFET, 31 A, 55 V IRFR5305PBF, 3-Pin D-PAK
  • £ 0.324
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Infineon P 31 A 55 V 65 mΩ 4V 2V 20 V D-PAK Surface Mount 3 Single Enhancement Power MOSFET 110 W 1200 pF @ -25 V 63 nC @ 10 V 6.73 x 7.49 x 2.39mm 39 ns IRFR5305PBF 14 ns 8s 2.39mm 7.49mm 6.73mm 1.3V - +175 °C 1 -55 °C -
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