MOSFET Transistors

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Part Details Brand Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Dimensions Typical Turn-Off Delay Time Series Typical Turn-On Delay Time Forward Transconductance Width Height Length Forward Diode Voltage Maximum Operating Temperature Number of Elements per Chip Minimum Operating Temperature Transistor Material
MOSFET N-Channel 30V 16A TO220AB ON Semiconductor N 16 A 30 V 5 mΩ - 1.2V -20 V, +20 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 110 W 3130 pF@ 15 V 56 nC @ 10 V 10.67 x 4.83 x 9.4mm 44 ns PowerTrench 10 ns - 4.83mm 9.4mm 10.67mm - +175 °C 1 -55 °C Si
MOSFET N-Channel 600V 16A TO220AB ON Semiconductor N 16 A 600 V 199 mΩ - 2V -30 V, +30 V TO-220 Through Hole 3 Single Enhancement Power MOSFET 134.4 W 1630 pF@ 100 V 40.2 nC @ 10 V 10.67 x 4.83 x 9.4mm 60.3 ns SupreMOS 15.8 ns - 4.83mm 9.4mm 10.67mm - +150 °C 1 -55 °C Si
MOSFET P-Channel 50V 0.13A SOT23
  • £ 0.036
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ON Semiconductor P 130 mA 50 V 10 Ω 2V - -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 225 mW 30 pF@ 5 V - 2.9 x 1.3 x 0.94mm 16 ns - 2.5 ns - 1.3mm 0.94mm 2.9mm - +150 °C 1 -55 °C Si
ON Semiconductor 2N7000 N-channel MOSFET, 200 mA, 60 V, 3-Pin TO-92
  • £ 0.049
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ON Semiconductor N 200 mA 60 V 5 Ω - 0.8V -20 V, +20 V TO-92 Through Hole 3 Single Enhancement Small Signal 400 mW 20 pF@ 25 V - 5.2 x 4.19 x 5.33mm - - - - 4.19mm 5.33mm 5.2mm - +150 °C 1 -55 °C Si
ON Semiconductor 2N7002DW Dual N-channel MOSFET, 115 mA, 60 V, 6-Pin SOT-363 (SC-70) ON Semiconductor N 115 mA 60 V 13.5 Ω - 1V -20 V, +20 V SOT-363 (SC-70) Surface Mount 6 Isolated Enhancement Power MOSFET 200 mW 37.8 pF@ 25 V - 2 x 1.25 x 1mm 12.5 ns - 5.85 ns - 1.25mm 1mm 2mm - +150 °C 2 -55 °C Si
ON Semiconductor 2N7002K N-channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 ON Semiconductor N 300 mA 60 V 4.8 Ω - 1V -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement - 350 mW 50 pF @ 25 V - 2.92 x 1.3 x 1.2mm 30 ns - 5 ns - 1.3mm 1.2mm 2.92mm - +150 °C 1 -55 °C Si
ON Semiconductor 2N7002KW N-channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23
  • £ 0.042
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ON Semiconductor N 300 mA 60 V 4.8 Ω - 1.1V -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement - 350 mW 50 pF @ 25 V - 2.92 x 1.3 x 1.2mm 30 ns - 5 ns - 1.3mm 1.2mm 2.92mm - +150 °C 1 -55 °C Si
ON Semiconductor 2N7002T N-channel MOSFET, 115 mA, 60 V, 3-Pin SOT-523
  • £ 0.064
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ON Semiconductor N 115 mA 60 V 13.5 Ω - 1V -20 V, +20 V SOT-523 (SC-89) Surface Mount 3 Single Enhancement - 200 mW 37.8 pF @ 25 V - 1.7 x 0.98 x 0.78mm 12.5 ns - 5.85 ns - 0.98mm 0.78mm 1.7mm - +150 °C 1 -55 °C Si
ON Semiconductor 2N7002V Dual N-channel MOSFET, 280 mA, 60 V, 6-Pin SOT-563F ON Semiconductor N 280 mA 60 V 13.5 Ω - 1V -20 V, +20 V SOT-563F Surface Mount 6 Isolated Enhancement - 250 mW 37.8 pF @ 25 V - 1.7 x 1.2 x 0.6mm 12.5 ns - 5.85 ns - 1.2mm 0.6mm 1.7mm - +150 °C 2 -55 °C Si
ON Semiconductor 2N7002W N-channel MOSFET, 115 mA, 60 V, 3-Pin SOT-323
  • £ 0.053
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ON Semiconductor N 115 mA 60 V 13.5 Ω - 1V -20 V, +20 V SOT-323 (SC-70) Surface Mount 3 Single Enhancement - 200 mW 37.8 pF @ 25 V - 2 x 1.25 x 1mm 12.5 ns - 5.85 ns - 1.25mm 1mm 2mm - +150 °C 1 -55 °C Si
ON Semiconductor 2N7002WT1G N-channel MOSFET, 340 mA, 60 V, 3-Pin SOT-323
  • £ 0.022
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ON Semiconductor N 340 mA 60 V 2.5 Ω 2.5V - -20 V, +20 V SOT-323 (SC-70) Surface Mount 3 Single Enhancement Small Signal 330 mW 24.5 pF @ 20 V 0.7 nC @ 4.5 V 2.2 x 1.35 x 0.9mm 55.8 ns - 12.2 ns - 1.35mm 0.9mm 2.2mm - +150 °C 1 -55 °C Si
ON Semiconductor 2SK3747-1E N-channel MOSFET, 2 A, 1500 V, 3-Pin TO-3P ON Semiconductor N 2 A 1500 V 13 Ω 3.5V - -35 V, +35 V TO-3P Through Hole 3 Single Enhancement Power MOSFET 50 W 380 pF @ 30 V 37.5 nC @ 10 V 15.5 x 5.5 x 24.5mm 152 ns - 12 ns - 5.5mm 24.5mm 15.5mm - +150 °C 1 - Si
ON Semiconductor 2SK4198FS N-channel MOSFET, 5 A, 600 V, 3-Pin TO-220F ON Semiconductor N 5 A 600 V 2.34 Ω 5V - -30 V, +30 V TO-220F Through Hole 3 Single Enhancement Power MOSFET 30 W 360 pF @ 30 V 14.3 nC @ 10 V 10.16 x 4.7 x 15.87mm 39 ns - 13 ns - 4.7mm 15.87mm 10.16mm - +150 °C 1 - Si
ON Semiconductor 2V7002KT1G N-channel MOSFET, 320 mA, 60 V, 3-Pin SOT-23
  • £ 0.025
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ON Semiconductor N 320 mA 60 V 2.5 Ω 2.3V - -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement Small Signal 420 mW 24.5 pF @ 20 V 0.7 nC @ 4.5 V 3.04 x 1.4 x 1.01mm 55.8 ns - 12.2 ns - 1.4mm 1.01mm 3.04mm - +150 °C 1 -55 °C Si
ON Semiconductor 2V7002LT1G N-channel MOSFET, 115 mA, 60 V, 3-Pin SOT-23
  • £ 0.025
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ON Semiconductor N 115 mA 60 V 13.5 Ω 2.5V - -20 V, +20 V SOT-23 Surface Mount 3 Single Enhancement Small Signal 225 mW, 300 mW 50 pF @ 25 V - 3.04 x 1.4 x 1.01mm 40 ns - 20 ns - 1.4mm 1.01mm 3.04mm - +150 °C 1 -55 °C Si
ON Semiconductor 2V7002WT1G N-channel MOSFET, 340 mA, 60 V, 3-Pin SOT-323 ON Semiconductor N 340 mA 60 V 2.5 Ω 2.5V - -20 V, +20 V SOT-323 (SC-70) Surface Mount 3 Single Enhancement - 330 mW 24.5 pF @ 20 V 0.7 nC @ 4.5 V 2.2 x 1.35 x 0.9mm 55.8 ns - 12.2 ns - 1.35mm 0.9mm 2.2mm - +150 °C 1 -55 °C Si
ON Semiconductor 3LN01C-TB-E N-channel MOSFET, 150 mA, 30 V, 3-Pin CP
  • £ 0.084
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ON Semiconductor N 150 mA 30 V 12.8 Ω 1.3V - -10 V, +10 V CP Surface Mount 3 Single Enhancement Small Signal 250 mW 7 pF @ 10 V 1.58 nC @ 10 V 2.9 x 1.5 x 1.1mm 155 ns - 19 ns - 1.5mm 1.1mm 2.9mm - +150 °C 1 - Si
ON Semiconductor 3LN01C-TB-H N-channel MOSFET, 150 mA, 30 V, 3-Pin SOT-23
  • £ 0.062
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ON Semiconductor N 150 mA 30 V 12.8 Ω 1.3V - -10 V, +10 V SOT-23 Surface Mount 3 Single Enhancement Small Signal 250 mW 7 pF @ 10 V 1.58 nC @ 10 V 2.9 x 1.5 x 1.1mm 155 ns - 19 ns - 1.5mm 1.1mm 2.9mm - +150 °C 1 - Si
ON Semiconductor 3LN01SS-TL-H N-channel MOSFET, 150 mA, 30 V, 3-Pin SSFP
  • £ 0.056
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ON Semiconductor N 150 mA 30 V 12.8 Ω 1.3V - -10 V, +10 V SSFP Surface Mount 3 Single Enhancement Small Signal 150 mW 7 pF @ 10 V 1.58 nC @ 10 V 1.4 x 0.8 x 0.6mm 155 ns - 19 ns - 0.8mm 0.6mm 1.4mm - +150 °C 1 - Si
ON Semiconductor 3LP01S-TL-E P-channel MOSFET, 100 mA, 30 V, 3-Pin SMCP
  • £ 0.082
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ON Semiconductor P 100 mA 30 V 54 Ω 1.4V - -10 V, +10 V SMCP Surface Mount 3 Single Enhancement Small Signal 150 mW 7.5 pF @ -10 V 1.43 nC @ 10 V 1.6 x 0.8 x 0.75mm 120 ns - 24 ns - 0.8mm 0.75mm 1.6mm - +150 °C 1 - Si
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