MOSFET Transistors

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Part Details Brand Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Typical Turn-Off Delay Time Dimensions Typical Turn-On Delay Time Forward Transconductance Series Height Width Length Forward Diode Voltage Maximum Operating Temperature Number of Elements per Chip Minimum Operating Temperature Transistor Material
Vishay IRFU420PBF N-channel MOSFET, 2.4 A, 500 V, 3-Pin IPAK
  • £ 0.426
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Vishay N 2.4 A 500 V 3 Ω 4V 2V ±20 V IPAK, TO-251 PCB Mount 3 Single Enhancement Power MOSFET 2.5 W 360 pF 19 (Maximumn) nC 33 ns 6.73 x 6.22 x 2.39mm 8 ns - - 2.39mm 6.22mm 6.73mm - +150 °C 1 -55 °C -
Vishay SI2302CDS-T1-E3 N-channel MOSFET, 2.6 A, 20 V, 3-Pin SOT-363
  • £ 0.155
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Vishay N 2.6 A 20 V 0.075 Ω 0.85V 0.4V ±8 V SOT-363 Surface Mount 3 Single Enhancement Power MOSFET 0.71 W - 3.5 nC 30 ns 3.04 x 1.4 x 1.02mm 8 ns 13s - 1.02mm 1.4mm 3.04mm 1.2V +150 °C 1 -55 °C -
Vishay SI2302DDS-T1-GE3 N-channel MOSFET, 2.6 A, 20 V, 3-Pin SOT-363
  • £ 0.155
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Vishay N 2.6 A 20 V 0.075 Ω 0.85V 0.4V ±8 V SOT-363 Surface Mount 3 Single Enhancement Power MOSFET 0.71 W - 3.5 nC 30 ns 3.04 x 1.4 x 1.02mm 8 ns 13s - 1.02mm 1.4mm 3.04mm 1.2V +150 °C 1 -55 °C -
Vishay SI2374DS-T1-GE3 N-channel MOSFET, 5.9 A, 20 V, 3-Pin SOT-363
  • £ 0.089
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Vishay N 5.9 A 20 V 0.041 Ω 1V 0.4V ±8 V SOT-363 Surface Mount 3 Single Enhancement Power MOSFET 1.7 W 735 pF 13.4 nC 16 ns 3.04 x 1.4 x 1.02mm 10 ns 29s - 1.02mm 1.4mm 3.04mm - +150 °C 1 -55 °C -
Vishay SI3443DDV-T1-GE3 P-channel MOSFET, 4 A, 20 V, 6-Pin TSOP6 Vishay P 4 A 20 V 0.09 Ω -1.5V -0.6V ±12 V TSOP6 Surface Mount 6 Single Enhancement Power MOSFET 2.7 W 970 pF 20 nC 43 ns 3.1 x 1.7 x 1mm 27 ns 14s - 1mm 1.7mm 3.1mm - +150 °C 1 -55 °C -
Vishay SI3457CDV-T1-GE3 P-channel MOSFET, 5.1 A, 30 V, 6-Pin TSOP6
  • £ 0.202
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Vishay P 5.1 A 30 V 0.013 Ω -3V -1V ±20 V TSOP6 Surface Mount 6 Single Enhancement Power MOSFET 3 W 450 pF 10 nC 20 ns 3.1 x 1.7 x 1mm 40 ns 8s - 1mm 1.7mm 3.1mm - +150 °C 1 -55 °C -
Vishay SI3473CDV-T1-GE3 P-channel MOSFET, 8 A, 12 V, 6-Pin TSOP6
  • £ 0.252
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Vishay P 8 A 12 V 0.036 Ω -1V -0.4V ±8 V TSOP6 Surface Mount 6 Single Enhancement Power MOSFET 4.2 W 2010 pF 43 nC 62 ns 3.1 x 1.7 x 1mm 10 ns 30s - 1mm 1.7mm 3.1mm - +150 °C 1 -55 °C -
Vishay SI3476DV-T1-GE3 N-channel MOSFET, 4.6 A, 80 V, 6-Pin SOT-23
  • £ 0.151
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Vishay N 4.6 A 80 V 0.126 Ω 3V 1.2V ±20 V SOT-23 Surface Mount 6 Single Enhancement Power MOSFET 3.6 W 195 pF 4.9 nC 14 ns 3.1 x 1.7 x 1mm 26 ns 7s - 1mm 1.7mm 3.1mm - +150 °C 1 -55 °C -
Vishay SI3493BDV-T1-GE3 P-channel MOSFET, 8 A, 20 V, 6-Pin TSOP6
  • £ 0.286
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Vishay P 8 A 20 V 0.045 Ω -0.9V -0.4V ±8 V TSOP6 Surface Mount 6 Single Enhancement Power MOSFET 2.97 W 1805 pF 29 nC 75 ns 3.1 x 1.7 x 1mm 22 ns 24.3S - 1mm 1.7mm 3.1mm - +150 °C 1 -55 °C -
Vishay SI4848DY-T1-GE3 N-channel MOSFET, 2.7 A, 150 V, 8-Pin SOIC Vishay N 2.7 A 150 V 0.095 Ω - 2V ±20 V SOIC Surface Mount 8 Single Enhancement Power MOSFET 3 W - 17 nC 24 ns 5 x 4 x 1.55mm 9 ns 15s - 1.55mm 4mm 5mm 1.2V +150 °C 1 -55 °C -
Vishay SQ2361ES-T1_GE3 P-channel MOSFET, 2.8 A, 60 V, 3-Pin SOT-23
  • £ 0.182
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Vishay P 2.8 A 60 V 0.32 Ω -2.5V -1.5V 20 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 2 W 380 pF 9 nC 22 ns 3.04 x 1.4 x 1.02mm 8 ns 5s - 1.02mm 1.4mm 3.04mm -1.2V +175 °C 1 -55 °C -
Vishay SQ9945BEY-T1_GE3 N-channel MOSFET, 5.4 A, 60 V, 8-Pin SO
  • £ 0.356
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Vishay N 5.4 A 60 V 0.137 Ω 2.5V 1.5V 20 V SO Surface Mount 8 Single Enhancement Power MOSFET 4 W 375 pF 8 nC 17 ns 5 x 4 x 1.55mm 6 ns 12s - 1.55mm 4mm 5mm 1.1V +175 °C 1 -55 °C -
Vishay SUD50P06-15-GE3 P-channel MOSFET, 50 A, 60 V, 3-Pin DPAK
  • £ 1.009
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Vishay P 50 A 60 V 0.028 Ω -3V -1V ±20 V TO-252AA Surface Mount 3 Single Enhancement Power MOSFET 113 W 4950 pF 110 nC 175 ns 6.73 x 6.22 x 2.38mm 15 ns 61s - 2.38mm 6.22mm 6.73mm -1.6V +150 °C 1 -55 °C -
Vishay TP0610K-T1-E3 P-channel MOSFET, 0.185 A, 60 V, 3-Pin SOT-23
  • £ 0.172
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Vishay P 0.185 A 60 V 9 Ω -3V -1V ±20 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 350 mW 23 pF 1.7 nC 35 ns 3.04 x 2.64 x 1.02mm 20 ns - - 1.02mm 2.64mm 3.04mm -1.4V +150 °C 1 -55 °C -
Vishay IRFP460BPBF N-channel MOSFET, 20 A, 500 V D Series, 3-Pin TO-247AC Vishay N 20 A 500 V 250 mΩ - 2V -20 V, +20 V TO-247AC Through Hole 3 Single Enhancement Power MOSFET 278 W 3094 pF@ 10 V 85 nC @ 10 V 117 ns 15.87 x 5.31 x 20.82mm 24 ns - D Series 20.82mm 5.31mm 15.87mm - +150 °C 1 -55 °C Si
Vishay IRF830ASPBF N-channel MOSFET, 5 A, 500 V, 3-Pin D2PAK Vishay N 5 A 500 V 1.4 Ω - 2V -30 V, +30 V D2PAK (TO-263) Surface Mount 3 Single Enhancement Power MOSFET 3.1 W 620 pF@ 25 V 24 nC @ 10 V 21 ns 10.67 x 9.65 x 4.83mm 10 ns - - 4.83mm 9.65mm 10.67mm - +150 °C 1 -55 °C Si
Vishay IRF9510SPBF P-channel MOSFET, 4 A, 100 V, 3-Pin D2PAK Vishay P 4 A 100 V 1.2 Ω - 2V -20 V, +20 V D2PAK (TO-263) Surface Mount 3 Single Enhancement Power MOSFET 3.7 W 200 pF@ 25 V 8.7 nC @ 10 V 15 ns 10.41 x 9.65 x 4.83mm 10 ns - - 4.83mm 9.65mm 10.41mm - +175 °C 1 -55 °C Si
Vishay IRF9530SPBF P-channel MOSFET, 12 A, 100 V, 3-Pin D2PAK Vishay P 12 A 100 V 300 mΩ - 2V -20 V, +20 V D2PAK (TO-263) Surface Mount 3 Single Enhancement Power MOSFET 3.7 W 860 pF@ 25 V 38 nC @ 10 V 31 ns 10.67 x 9.02 x 4.83mm 12 ns - - 4.83mm 9.02mm 10.67mm - +175 °C 1 -55 °C Si
Vishay IRF9540SPBF P-channel MOSFET, 19 A, 100 V, 3-Pin D2PAK Vishay P 19 A 100 V 200 mΩ - 2V -20 V, +20 V D2PAK (TO-263) Surface Mount 3 Single Enhancement Power MOSFET 150 W 1400 pF @ 25 V 61 nC @ 10 V 34 ns 10.67 x 9.65 x 4.83mm 16 ns - - 4.83mm 9.65mm 10.67mm - +175 °C 1 -55 °C Si
Vishay IRF9Z10PBF P-channel MOSFET, 4.7 A, 60 V, 3-Pin TO-220AB Vishay P 4.7 A 60 V 500 mΩ - 2V -20 V, +20 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 43 W 270 pF @ -25 V 12 nC @ 10 V 10 ns 10.51 x 4.65 x 15.49mm 11 ns - - 15.49mm 4.65mm 10.51mm - +175 °C 1 -55 °C Si
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