Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
285 W
Number of Transistors
2
Package Type
AG-34MM
Configuration
Dual
Mounting Type
Chassis Mount
Stock information temporarily unavailable.
Please check again later.
Stock information temporarily unavailable.
AED 434.60
Each (ex VAT)
AED 456.33
Each (inc VAT)
Infineon FF50R12RT4HOSA1 Dual IGBT, 50 A 1200 V AG-34MM, Chassis Mount
Select packaging type
1
AED 434.60
Each (ex VAT)
AED 456.33
Each (inc VAT)
Infineon FF50R12RT4HOSA1 Dual IGBT, 50 A 1200 V AG-34MM, Chassis Mount
Stock information temporarily unavailable.
Select packaging type
1
Buy in bulk
quantity | Unit price |
---|---|
1 - 4 | AED 434.60 |
5 - 9 | AED 418.45 |
10 - 49 | AED 402.20 |
50+ | AED 394.25 |
Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
285 W
Number of Transistors
2
Package Type
AG-34MM
Configuration
Dual
Mounting Type
Chassis Mount