Technical Document
Specifications
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Transistor Material
Si
Pin Count
3
Minimum Operating Temperature
-55 °C
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Configuration
Single
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
2V
Maximum Operating Temperature
+175 °C
Maximum Drain Source Voltage
100 V
Maximum Gate Threshold Voltage
4V
Series
HEXFET
Width
4.69mm
Package Type
TO-220AB
Length
10.54mm
Height
8.77mm
Maximum Power Dissipation
130 W
Maximum Continuous Drain Current
33 A
Brand
InfineonMaximum Drain Source Resistance
44 mΩ
Typical Gate Charge @ Vgs
71 nC @ 10 V
Country of Origin
China
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AED 3.60
Each (In a Pack of 20) (ex VAT)
AED 3.78
Each (In a Pack of 20) (inc VAT)
Standard
20
AED 3.60
Each (In a Pack of 20) (ex VAT)
AED 3.78
Each (In a Pack of 20) (inc VAT)
Standard
20
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
20 - 80 | AED 3.60 | AED 72.00 |
100 - 180 | AED 2.80 | AED 56.00 |
200 - 480 | AED 2.60 | AED 52.00 |
500 - 980 | AED 2.45 | AED 49.00 |
1000+ | AED 2.30 | AED 46.00 |
Technical Document
Specifications
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Transistor Material
Si
Pin Count
3
Minimum Operating Temperature
-55 °C
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Configuration
Single
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
2V
Maximum Operating Temperature
+175 °C
Maximum Drain Source Voltage
100 V
Maximum Gate Threshold Voltage
4V
Series
HEXFET
Width
4.69mm
Package Type
TO-220AB
Length
10.54mm
Height
8.77mm
Maximum Power Dissipation
130 W
Maximum Continuous Drain Current
33 A
Brand
InfineonMaximum Drain Source Resistance
44 mΩ
Typical Gate Charge @ Vgs
71 nC @ 10 V
Country of Origin
China