Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
6.6 A
Maximum Drain Source Voltage
20 V
Series
HEXFET
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.029 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.7V
Number of Elements per Chip
1
Transistor Material
Si
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AED 2.05
Each (On a Reel of 4000) (ex VAT)
AED 2.152
Each (On a Reel of 4000) (inc VAT)
4000
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
6.6 A
Maximum Drain Source Voltage
20 V
Series
HEXFET
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.029 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.7V
Number of Elements per Chip
1
Transistor Material
Si