Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
41 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.9 x 5.3 x 20.95mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
Infineon Discrete IGBT Transistors
Discrete IGBT transistors from Infineon offer various technologies such as NPT, Trenchstop™ and Fieldstop. They can be used in many applications that may require hard or soft switching including Industrial drives, UPS, Inverters, home appliances and Induction cooking. Some devices include an anti-parallel diode or monolithically integrated diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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AED 23.10
Each (In a Tube of 30) (ex VAT)
AED 24.255
Each (In a Tube of 30) (inc VAT)
30
AED 23.10
Each (In a Tube of 30) (ex VAT)
AED 24.255
Each (In a Tube of 30) (inc VAT)
30
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
30 - 30 | AED 23.10 | AED 693.00 |
60 - 120 | AED 22.15 | AED 664.50 |
150+ | AED 21.45 | AED 643.50 |
Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
41 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.9 x 5.3 x 20.95mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
Infineon Discrete IGBT Transistors
Discrete IGBT transistors from Infineon offer various technologies such as NPT, Trenchstop™ and Fieldstop. They can be used in many applications that may require hard or soft switching including Industrial drives, UPS, Inverters, home appliances and Induction cooking. Some devices include an anti-parallel diode or monolithically integrated diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.