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N-Channel MOSFET, 17 A, 800 V, 3-Pin D2PAK Infineon SPB17N80C3ATMA1

RS Stock No.: 752-8482Brand: InfineonManufacturers Part No.: SPB17N80C3ATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

800 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

290 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

227 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

12 nC @ 10 V

Number of Elements per Chip

1

Length

10.31mm

Width

9.45mm

Maximum Operating Temperature

+150 °C

Series

CoolMOS C3

Minimum Operating Temperature

-55 °C

Height

4.57mm

Product details

Infineon CoolMOS™C3 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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AED 21.80

AED 21.80 Each (ex VAT)

AED 22.89

AED 22.89 Each (inc. VAT)

N-Channel MOSFET, 17 A, 800 V, 3-Pin D2PAK Infineon SPB17N80C3ATMA1
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AED 21.80

AED 21.80 Each (ex VAT)

AED 22.89

AED 22.89 Each (inc. VAT)

N-Channel MOSFET, 17 A, 800 V, 3-Pin D2PAK Infineon SPB17N80C3ATMA1
Stock information temporarily unavailable.
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Buy in bulk

quantityUnit price
1 - 9AED 21.80
10 - 49AED 18.50
50 - 249AED 17.65
250 - 499AED 15.15
500+AED 13.90

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

800 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

290 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

227 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

12 nC @ 10 V

Number of Elements per Chip

1

Length

10.31mm

Width

9.45mm

Maximum Operating Temperature

+150 °C

Series

CoolMOS C3

Minimum Operating Temperature

-55 °C

Height

4.57mm

Product details

Infineon CoolMOS™C3 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more