Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
266 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.9 nC @ 4.5 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1mm
Minimum Operating Temperature
-55 °C
Product details
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Please check again later.
AED 0.75
Each (In a Pack of 50) (ex VAT)
AED 0.788
Each (In a Pack of 50) (inc. VAT)
Standard
50
AED 0.75
Each (In a Pack of 50) (ex VAT)
AED 0.788
Each (In a Pack of 50) (inc. VAT)
Standard
50
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
50 - 100 | AED 0.75 | AED 37.50 |
150 - 250 | AED 0.35 | AED 17.50 |
300 - 550 | AED 0.30 | AED 15.00 |
600 - 1150 | AED 0.30 | AED 15.00 |
1200+ | AED 0.30 | AED 15.00 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
266 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
0.9 nC @ 4.5 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1mm
Minimum Operating Temperature
-55 °C
Product details