Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
10 (Continuous) A, 15 (Peak) A
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-218
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
20
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
4 V dc
Maximum Collector Cut-off Current
0.7mA
Height
20.35mm
Width
4.9mm
Maximum Power Dissipation
80 W
Minimum Operating Temperature
-65 °C
Dimensions
15.2 x 4.9 x 20.35mm
Maximum Operating Temperature
+150 °C
Length
15.2mm
Base Current
3A
Country of Origin
China
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AED 8.70
Each (In a Tube of 30) (ex VAT)
AED 9.135
Each (In a Tube of 30) (inc VAT)
30
AED 8.70
Each (In a Tube of 30) (ex VAT)
AED 9.135
Each (In a Tube of 30) (inc VAT)
30
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
30 - 90 | AED 8.70 | AED 261.00 |
120 - 480 | AED 7.15 | AED 214.50 |
510 - 990 | AED 6.15 | AED 184.50 |
1020+ | AED 5.60 | AED 168.00 |
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
10 (Continuous) A, 15 (Peak) A
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-218
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
20
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
4 V dc
Maximum Collector Cut-off Current
0.7mA
Height
20.35mm
Width
4.9mm
Maximum Power Dissipation
80 W
Minimum Operating Temperature
-65 °C
Dimensions
15.2 x 4.9 x 20.35mm
Maximum Operating Temperature
+150 °C
Length
15.2mm
Base Current
3A
Country of Origin
China