Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
7.5A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
38W
Package Type
TO-220
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.95V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Standards/Approvals
RoHS
Automotive Standard
No
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Stock information temporarily unavailable.
AED 27.55
AED 5.51 Each (In a Pack of 5) (ex VAT)
AED 28.93
AED 5.786 Each (In a Pack of 5) (inc. VAT)
Standard
5
AED 27.55
AED 5.51 Each (In a Pack of 5) (ex VAT)
AED 28.93
AED 5.786 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 45 | AED 5.51 | AED 27.55 |
| 50 - 245 | AED 4.494 | AED 22.47 |
| 250 - 495 | AED 3.478 | AED 17.39 |
| 500+ | AED 3.156 | AED 15.78 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
7.5A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
38W
Package Type
TO-220
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.95V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Standards/Approvals
RoHS
Automotive Standard
No
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
