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N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 Toshiba TK20N60W5,S1VF(S

RS Stock No.: 125-0551Brand: ToshibaManufacturers Part No.: TK20N60W5,S1VF(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

175 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

165 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.02mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

15.94mm

Typical Gate Charge @ Vgs

55 nC @ 10 V

Height

20.95mm

Forward Diode Voltage

1.7V

Country of Origin

Japan

Product details

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

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AED 63.75

AED 12.75 Each (In a Pack of 5) (ex VAT)

AED 66.94

AED 13.388 Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 Toshiba TK20N60W5,S1VF(S

5

Available in multiples of 5
5AED 63.75
10AED 127.50
15AED 191.25
20AED 255.00
25AED 287.50
30AED 345.00
35AED 402.50
40AED 460.00
45AED 517.50
50AED 532.50
55AED 585.75
60AED 639.00
65AED 692.25
70AED 745.50
75AED 798.75

AED 63.75

AED 12.75 Each (In a Pack of 5) (ex VAT)

AED 66.94

AED 13.388 Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 Toshiba TK20N60W5,S1VF(S
Stock information temporarily unavailable.

5

Available in multiples of 5
5AED 63.75
10AED 127.50
15AED 191.25
20AED 255.00
25AED 287.50
30AED 345.00
35AED 402.50
40AED 460.00
45AED 517.50
50AED 532.50
55AED 585.75
60AED 639.00
65AED 692.25
70AED 745.50
75AED 798.75

Buy in bulk

quantityUnit pricePer Pack
5 - 20AED 12.75AED 63.75
25 - 45AED 11.50AED 57.50
50+AED 10.65AED 53.25

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

175 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

165 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.02mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

15.94mm

Typical Gate Charge @ Vgs

55 nC @ 10 V

Height

20.95mm

Forward Diode Voltage

1.7V

Country of Origin

Japan

Product details

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more