Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.47 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
31 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Width
1.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
26.2 nC @ 10 V
Height
0.8mm
Series
TrenchFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
AED 2.30
Each (In a Pack of 10) (ex VAT)
AED 2.415
Each (In a Pack of 10) (inc VAT)
10
AED 2.30
Each (In a Pack of 10) (ex VAT)
AED 2.415
Each (In a Pack of 10) (inc VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | AED 2.30 | AED 23.00 |
50 - 140 | AED 2.25 | AED 22.50 |
150 - 740 | AED 1.90 | AED 19.00 |
750 - 1490 | AED 1.65 | AED 16.50 |
1500+ | AED 1.40 | AED 14.00 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.47 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
31 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Width
1.9mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
26.2 nC @ 10 V
Height
0.8mm
Series
TrenchFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details