Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
20 V
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.5 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
117 nC @ 10 V
Width
3.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.8mm
Product details
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
AED 1.25
Each (Supplied on a Reel) (ex VAT)
AED 1.312
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
20
AED 1.25
Each (Supplied on a Reel) (ex VAT)
AED 1.312
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
20
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
20 V
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.5 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
117 nC @ 10 V
Width
3.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.8mm
Product details